A brand new technical paper titled “Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts” was revealed by researchers at TU Wien (Vienna College of Know-how), Johannes Kepler College, CEA-LETI, and Swiss Federal Laboratories for Supplies Science and Know-how.

Discover the technical paper here. Revealed September 2022.

Summary:

“Si1−xGex is a key materials in trendy complementary metal-oxide-semiconductor and bipolar units. Nevertheless, regardless of appreciable efforts in metal-silicide and -germanide compound materials methods, reliability considerations have to date hindered the implementation of metal-Si1−xGex junctions which are very important for various rising “Greater than Moore” and quantum computing paradigms. On this respect, the systematic structural and digital properties of Al-Si1−xGex heterostructures, obtained from a thermally induced change between ultra-thin Si1−xGex nanosheets and Al layers are reported. Remarkably, no intermetallic phases are discovered after the change course of. As a substitute, abrupt, flat, and void-free junctions of excessive structural high quality might be obtained. Apparently, ultra-thin interfacial Si layers are shaped between the metallic and Si1−xGex segments, explaining the morphologic stability. Built-in into omega-gated Schottky barrier transistors with the channel size being outlined by the selective transformation of Si1−xGex into single-elementary Al leads, an in depth evaluation of the transport is performed. On this respect, a report on a extremely versatile platform with Si1−xGex composition-dependent properties starting from extremely clear contacts to distinct Schottky limitations is offered. Most notably, the offered abrupt, strong, and dependable metal-Si1−xGex junctions can open up new system implementations for various kinds of rising nanoelectronic, optoelectronic, and quantum units.”

Quotation:
Wind, L., Sistani, M., Böckle, R., Smoliner, J., Vukŭsić, L., Aberl, J., Brehm, M., Schweizer, P., Maeder, X., Michler, J., Fournel, F., Hartmann, J.-M., Weber, W. M., Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts. Small 2022, 18, 2204178. https://doi.org/10.1002/smll.202204178.



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