A brand new technical paper titled “Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts” was revealed by researchers at TU Wien (Vienna College of Know-how), Johannes Kepler College, CEA-LETI, and Swiss Federal Laboratories for Supplies Science and Know-how.

Discover the technical paper here. Revealed September 2022.


“Si1−xGex is a key materials in trendy complementary metal-oxide-semiconductor and bipolar units. Nevertheless, regardless of appreciable efforts in metal-silicide and -germanide compound materials methods, reliability considerations have to date hindered the implementation of metal-Si1−xGex junctions which are very important for various rising “Greater than Moore” and quantum computing paradigms. On this respect, the systematic structural and digital properties of Al-Si1−xGex heterostructures, obtained from a thermally induced change between ultra-thin Si1−xGex nanosheets and Al layers are reported. Remarkably, no intermetallic phases are discovered after the change course of. As a substitute, abrupt, flat, and void-free junctions of excessive structural high quality might be obtained. Apparently, ultra-thin interfacial Si layers are shaped between the metallic and Si1−xGex segments, explaining the morphologic stability. Built-in into omega-gated Schottky barrier transistors with the channel size being outlined by the selective transformation of Si1−xGex into single-elementary Al leads, an in depth evaluation of the transport is performed. On this respect, a report on a extremely versatile platform with Si1−xGex composition-dependent properties starting from extremely clear contacts to distinct Schottky limitations is offered. Most notably, the offered abrupt, strong, and dependable metal-Si1−xGex junctions can open up new system implementations for various kinds of rising nanoelectronic, optoelectronic, and quantum units.”

Wind, L., Sistani, M., Böckle, R., Smoliner, J., Vukŭsić, L., Aberl, J., Brehm, M., Schweizer, P., Maeder, X., Michler, J., Fournel, F., Hartmann, J.-M., Weber, W. M., Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts. Small 2022, 18, 2204178. https://doi.org/10.1002/smll.202204178.

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