Patterning efficiency strongly will depend on resist/underlayer adhesion. With the suitable resist/underlayer adhesion, one can understand 28-nm pitch printing with defect-free depth of focus bigger than 300 nm and unbiased line-width roughness round 2.2 nm.

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Photoresist metrics akin to decision, roughness, CD uniformity, and total course of window are sometimes aimed to understand the total potential of EUV lithography. From the view of the supplies provider, enhancements over the aforementioned metrics might be achieved by optimizing the useful supplies used below the resist. The underlayers can considerably improve the resist efficiency by offering acceptable adhesive forces to the patterned options, counterbalancing the tendency of sample collapse, and bettering the resist/substrate compatibility. On this examine, we introduce spin-on-glass (SOG) underlayers that may present adhesion to withstand by means of completely different mechanisms, together with covalent bonding, hydrogen bonding, and Van der Waals drive. The underlayers had been characterised in depth to grasp their coating high quality, adhesion to withstand, and floor vitality. The EUV lithographic efficiency was evaluated by making use of chemically amplified resists (CARs) immediately onto these SOGs for line/house options on the goal pitch sizes of 30 nm and 28 nm. The lithographic analysis signifies that the patterning efficiency strongly will depend on resist/underlayer adhesion. By appropriately adjusting the resist/underlayer adhesion, we will understand 28 nm pitch printing with defect-free depth of focus bigger than 300 nm and unbiased line-width roughness round 2.2 nm. The plasma etch price of the SOGs had been additionally evaluated to evaluate their sample switch efficiency.

Authors: Yichen Liang,1 Kelsey E. Brakensiek,1 Joyce Lowes,1 Andrea M. Chacko,1 Ruimeng Zhang,1 Veerle Van Driessche,1 Xiaolong Lang,1 Jaishankar Kasthuri,1 Ming Luo,1 Douglas J. Guerrero1

1Brewer Science, Inc. (United States)

Proceedings Quantity 12055, Advances in Patterning Supplies and Processes XXXIX; 120550A (2022) https://doi.org/10.1117/12.2610985
Occasion: SPIE Superior Lithography + Patterning, 2022, San Jose, California, United States

Click on here to view entry on SPIE Digital Library (presentation and paper).



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