In superior DRAM, capacitors with intently packed patterning are designed to extend cell density. Thus, superior patterning schemes, resembling a number of litho-etch, SADP and SAQP processes could also be wanted. On this paper, we systematically consider a DRAM capacitor gap formation course of that features SADP and SAQP patterning, utilizing digital fabrication and statistical evaluation in SEMulator3D®. The aim of this evaluation is to acquire a quantified course of window comparability between the SADP and SAQP patterning schemes.
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