This paper reviews the readiness of key EUV resist course of applied sciences utilizing Steel Oxide Resist (MOR) aiming for the DRAM software. For MOR, steel contamination discount and CD uniformity (CDU) are the important thing efficiency necessities anticipated regarding publish publicity bake (PEB). Based mostly on years of expertise with spin-on kind Inpria MOR, we have now designed a brand new PEB oven to realize contamination mitigation, whereas conserving our excessive commonplace of CDU. The brand new bake oven was launched in our coater and developer and evaluated utilizing line/house patterns. As described within the outcomes, distinctive CD uniformity was realized whereas exceeding the steel contamination specification. The brand new plate design additionally enabled a 30% discount in dose-to-size with out degradation of CDU when making use of larger PEB temperature. One other problem for the DRAM software particularly is sample collapse as utilized to pillar patterns. By optimization of a number of parameters, the sample collapse margin prolonged the minimal CD by 13.8%. The outcome was achieved with a mixture of SiC rather than SOG for underneath layer, thinner resist movie thickness and a modified resist materials, MOR-B. Lastly, to realize goal yield efficiency, defectivity discount can also be an necessary activity in direction of MOR software. An built-in strategy is required to comprehend scum free patterning as a result of if steel residuals stay within the open house, they’ll trigger yield-killing defects. By analyzing attainable root causes of defect sources, we try to remove etch-masking scum layer current after standard developer processing. By making use of a publish develop rinse together with novel {hardware} for defect discount, bridge defects have been diminished as much as 19% with new the know-how.

Authors: Shinichiro Kawakami,1 Tomoya Onitsuka,1 Yuya Kamei,1 Satoru Shimura,1 Chan Ha Park,2 Sang Ho Lee,2 Hong Goo Lee,2 Jae Wook Web optimization,2 Jin il Kim,2 Jun ho Roh,2 Jin Hyung Kim,2 Ki Lyoung Lee,2 Seiji Nagahara,3 Jeoung Yun Kim,4 Jang Hwan Kim,4 Shingo Inaba,5 Jong Eun Park4

1Tokyo Electron Kyushu Ltd. (Japan)
2SK Hynix, Inc. (Korea, Republic of)
3Tokyo Electron Ltd. (Japan)
4Tokyo Electron Korea Ltd. (Korea, Republic of)
5Tokyo Electron Korea Ltd. (Japan)


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