A brand new technical paper titled “Impact of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET” was revealed by researchers at Chungnam Nationwide College and Korea Polytechnic Faculty.

“This examine investigated the consequences of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on {the electrical} efficiency and low-frequency noise (LFN) of a completely depleted silicon-on-insulator p-type TFET. With out high-pressure annealing, the everyday noise energy spectral density exhibited two Lorentzian spectra that had been affected by quick and gradual entice websites. With high-pressure annealing, the interface entice density associated to quick entice websites was diminished,” states the paper.

Discover the technical paper here. Printed November 2022. Open Entry.

Shin, HJ., Eadi, S.B., An, YJ. et al. Impact of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET. Sci Rep 12, 18516 (2022). https://doi.org/10.1038/s41598-022-22575-5.


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