The Zeta-Sequence optical profilers present correct measurement and automatic evaluation of excessive side ratio buildings comparable to HEMT vias utilizing non-destructive and excessive throughput metrology strategies.

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The Zeta-Sequence optical profilers present correct measurement and automatic evaluation of excessive side ratio buildings comparable to HEMT vias utilizing non-destructive and excessive throughput metrology strategies.

 Introduction
Broad bandgap semiconductor supplies are extraordinarily enticing to be used in energy electronics, on account of their efficiency functionality at excessive temperature, energy and frequency. Amongst broad bandgap semiconductors, Gallium Nitride (GaN) is utilized in energy system manufacturing (a) to exceed the efficiency of silicon high-voltage units and (b) to be more economical than silicon carbide (SiC) energy units. The properties of GaN high-electron mobility transistor (HEMT) units utilizing a SiC substrate are optimized for top temperature electronics, radio frequency (RF) energy amplifiers and energy microwave functions. 

The GaN/SiC HEMT manufacturing move sometimes consists of the next steps: SiC substrate formation; GaN epitaxy; etch; entrance facet system growth; wafer bonding to provider; wafer thinning; onerous masks fabricating; via-hole etching; Au electroplating; wafer debonding/cleansing, packaging, via-hole etching course of and Au electroplating. Determine 1 exhibits the bottom through construction earlier than (prime) and after (backside) the Au electroplating step. Monitoring the through etch course of is essential as a result of the standard of the etch immediately impacts HEMT system efficiency. The important thing metrology parameters at this step embody the opening diameter and common depth of the through holes. Though scanning electron microscopes (SEMs) can be utilized to measure gap depth of excessive side ratio (~ 1:3) buildings, SEM strategies are both damaging or have low throughput. In distinction, 3D optical profiling presents a non-destructive, high-thruput technique of measuring the essential dimensions vias. 

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